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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt
SOT–223 for Surface Mount
This advanced E–FET is a TMOS power MOSFET designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low threshold voltage so it is fully enhanced with 5 Volts. This new energy efficient device also offers a drain–to–source diode with a fast recovery time.
MMFT3055EL Datasheet
