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MMFT3055VL - POWER FET

Key Features

  • of TMOS V.
  • On.
  • resistance Area Product about One.
  • half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology.
  • Faster Switching than E.
  • FET Predecessors Features Common to TMOS V and TMOS E.
  • FETS.
  • Avalanche Energy Specified.
  • IDSS and VDS(on) Specified at Elevated Temperature.
  • Static Parameters are the Same for both TMOS V and TMOS E.
  • FET.
  • Available in 12 mm Tape & Reel Use MMFT3055VLT1 to orde.

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📁 Similar Datasheet

Part Number Description Manufacturer
MMFT3055V Power MOSFET ON Semiconductor
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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MMFT3055V Power MOSFET
MMFT3055E MEDIUM POWER MOSFET
MMFT3055EL MEDIUM POWER MOSFET
MMFT107T1 MEDIUM POWER MOSFET
MMFT108T1 N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT3055VL/D ™ Data Sheet TMOS V™ SOT-223 for Surface Mount Designer's MMFT3055VL N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes.