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MMFT5P03HD - MEDIUM POWER FET

Key Features

  • ultra low RDS(on) and true logic level performance. It is capable of withstanding high energy in the avalanche and commutation modes and the drain.
  • to.
  • source diode has a very low reverse recovery time. MMFT5P03HD devices are designed for use in low voltage, high speed switching.

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Full PDF Text Transcription (Reference)

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMFT5P03HD/D Designer's ™ Data Sheet Medium Power Surface Mount Products MMFT5P03HD Motorola Preferred Device TMOS P-Channel Field Effect Transistor MMFT5P03HD is an advanced power MOSFET which utilizes Motorola’s High Cell Density HDTMOS process. This miniature surface mount MOSFET features ultra low RDS(on) and true logic level performance. It is capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. MMFT5P03HD devices are designed for use in low voltage, high speed switching applications where power efficiency is important.