MMFT6661T1 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N- Channel Enhancement- Mode Silicon Gate TMOS SOT- 223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as switching regulators, dc- dc converters, solenoid and relay drivers. The device is housed in the SOT- 223 package which is designed for medium power surface mount applications. - Silicon Gate for Fast Switching Speeds - RDS(on) = 4.0 Ohm Max - Low Drive Requirement, VGS = 2.0 Volts Max - The SOT- 223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering eliminating the...