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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Designer’s™ Data Sheet Insulated Gate Bipolar Transistor
N−Channel Enhancement−Mode Silicon Gate
This IGBT contains a built−in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in efficient operation at higher frequencies. This device is ideally suited for high frequency electronic ballasts. • Built−In Free Wheeling Diode • Built−In Gate Protection Zener Diodes • Industry Standard Package (SOT223) • High Speed Eoff: Typical 6.5 mJ @ IC = 0.3 A; TC = 125°C and
dV/dt = 1000 V/ms • Robust High Voltage Termination • Robust Turn−Off SOA
C
G
E
MMG05N60D
IGBT 0.
MMG05N60D Datasheet
