MMG05N60D Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMG05N60D/D Designer’s™ Data Sheet Insulated Gate Bipolar Transistor N−Channel Enhancement−Mode Silicon Gate This IGBT contains a built−in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in efficient operation at higher frequencies. This device is ideally suited for high frequency electronic ballasts.