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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Quad Amplifier/Switch
Transistor
PNP Silicon
1 16 2 15 3 14 4 13 5 12 6 11 7 10 89
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous
VCEO VCB VEB
IC
–40
–40
–5.0
–200
Each Transistor
Four Transistors Equal Power
Vdc Vdc Vdc mAdc
Power Dissipation @ TA = 25°C Derate above 25°C
PD
0.4 3.2
800 mW 6.4 mW/°C
Power Dissipation @ TC = 25°C Derate above 25°C
PD
0.66 5.3
1.92 Watts 15.4 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
–55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1) (IC = –1.
MMPQ3906 Datasheet
