MMSF3P03HD Datasheet PDF

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted)(1) Rating Drain–to–Source Voltage Drain–to–Gate Voltage (RGS = 1.0 MΩ) Gate–to–Source Voltage — Continuous Drain Current — Continuous @ TA = 25°C Drain Current — Continuous @ TA = 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ TA = 25°C (2) Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 20 Vdc, VGS = 5.0 Vdc, IL = 9.0 Apk, L = 14 mH, RG = 25 Ω) Thermal Resistance — Junction to Ambient (2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds N–C Source Source Gate 1 2 3 4 8 7 6 5 Drain Drain Drain Drain Top View Symbol VDSS VDGR VGS ID ID IDM PD EAS RθJA TL Value 30 30 ± 20 4.6 3.0 50 2.5 Unit Vdc Vdc Vdc Adc Apk Watts °C mJ °C/W °C – 55 to 150 567 50 260 DEVICE MARKING S3P03 (1) Negative signs for P–Channel device omitted for clarity. (2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided), 10 sec. max.