MMSF5N02HD
feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and mutation modes and the drain- to- source diode has a very low reverse recovery time. Mini MOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc- dc converters, and power management in portable and battery powered products such as puters, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
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SINGLE TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS RDS(on) = 0.025 OHM
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D CASE 751- 05, Style 13 SO- 8 G S N- C Source Source Gate 1 2 3 4 8 7 6 5 Drain Drain Drain Drain
Ultra Low RDS(on)...
