MPF1010 datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MPF1010 |
|---|---|
| Datasheet | MPF1010-Motorola.pdf |
| File Size | 44.22 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS SWITCHING |
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(2) Pulse Width < 300 us. (Ta = 25°C unless otherwise noted ) Characteristic Symbol OFF CHARACTERISTICS Drain-Source Breakdown Voltage (Vgs = o, di = 100 uA) Zero Gate Voltage Drain Current (v D s = 60 v, vqs = o> Gate-Body Leakage Current (Vqs = 10 vdc, v D s = oj ON CHARACTERISTICS V(BR)DSS IDSS IGSS Gate Threshold Voltage (ID = 15 mA, VdS = VGS) Drain-Source On-Voltage (ID = 120.
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MPF102 | JFET VHF Amplifier |
| MPF108 | JFET VHF AMPLIFIER |
| MPF130 | Silicon N-Channel Dual Gate FET |
| MPF131 | Silicon N-Channel Dual Gate FET |
| MPF132 | Silicon N-Channel Dual Gate FET |
| MPF201 | DUAL-GATE MOSFET VHF AMPLIFIER |
| MPF202 | DUAL-GATE MOSFET VHF AMPLIFIER |
| MPF203 | DUAL-GATE MOSFET VHF AMPLIFIER |
| MPF209 | DUAL-GATE MOSFET |
| MPF211 | DUAL-GATE MOSFET VHF AMPLIFIER |
