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MPF212 - DUAL-GATE MOSFET VHF AMPLIFIER

Download the MPF212 datasheet PDF. This datasheet also covers the MPF211 variant, as both devices belong to the same dual-gate mosfet vhf amplifier family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MPF211-Motorola.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MPF211 DUAL-GATE MOSFET VHF AMPLIFIER
MPF213 DUAL-GATE MOSFET VHF AMPLIFIER
MPF201 DUAL-GATE MOSFET VHF AMPLIFIER
MPF202 DUAL-GATE MOSFET VHF AMPLIFIER
MPF203 DUAL-GATE MOSFET VHF AMPLIFIER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage —Drain Current Continuous Gate Current Total Device Dissipation (a TA = 25°C Derate above 25°C Total Device Dissipation (w Tq =. 25°C Derate above 25°C Lead Temperature, 1/16" From Seated Surface for 10 Seconds Junction Temperature Range Storage Channel Temperature Range Symbol vDs V DG1 V DG2 ID 'G1 !G2 Pd Pd TL MPF211 MPF212 MPF213 27 35 35 40 35 40 50 ±10 ±10 300 1.71 1.2 8.0 260 Unit Vdc Vdc mAdc mAdc mW mW/°C Watt mW'°C °C Tj Tstg - 65 to + 1 50 -65 to +150 °C °C MPF211 MPF212 MPF213 CASE 317-01, STYLE 1 DUAL-GATE MOSFET VHF AMPLIFIER —N-CHANNEL DEPLETION ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.! Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VqiS = VQ2S = -4.