MPF4393
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPF4392/D
JFETs Switching
N- Channel
- Depletion
3 GATE
1 DRAIN
MPF4392 MPF4393
Motorola Preferred Devices
2 SOURCE
MAXIMUM RATINGS
Rating Drain
- Source Voltage Drain
- Gate Voltage Gate- Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Channel Temperature Range Symbol VDS VDG VGS IG(f) PD Tchannel, Tstg Value 30 30 30 50 350 2.8
- 65 to +150 Unit Vdc Vdc Vdc m Adc m W m W/°C °C CASE 29- 04, STYLE 5 TO- 92 (TO- 226AA)
1 2 3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Gate
- Source Breakdown Voltage (IG = 1.0 µAdc, VDS = 0) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) (VGS = 15 Vdc, VDS = 0, TA = 100°C) Drain- Cutoff Current (VDS = 15 Vdc, VGS = 12 Vdc) (VDS = 15 Vdc, VGS = 12 Vdc, TA = 100°C) Gate Source Voltage (VDS = 15 Vdc, ID = 10 n Adc) MPF4392 MPF4393 V(BR)GSS IGSS
- - ID(off)
- -...
