Full PDF Text Transcription for MPF910 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MPF910. For precise diagrams, and layout, please refer to the original PDF.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS Switching N–Channel — Enhancement MPF910 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltag...
View more extracted text
SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current – Continuous(1) – Pulsed(2) Total Device Dissipation @ TA = 25°C Derate above 25°C MPF910 VDS VGS VGSM ID IDM PD 60 Vdc ± 20 Vdc ± 40 Vpk 0.5 Adc 1.0 1.0 Watts 8.0 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C MFE910 PD 6.
More Datasheets from Motorola Semiconductor (now NXP Semiconductors)
MPF910 Datasheet
