The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Quad Memory Driver Transistor
PNP Silicon
14 13 12 11 10 9 8
PNP
1234567
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous
VCEO VCBO VEBO
IC
–40
–40
–5.0
–1.0
Each Transistor
Four Transistors Equal Power
Vdc Vdc Vdc Adc
Total Device Dissipation
@ TA = 25°C(1) Derate above 25°C
PD 650
5.2
1500 12
mW mW/°C
Total Device Dissipation
@ TC = 25°C Derate above 25°C
PD 1.25
10
3.2 Watts 25.6 mW/°C
Operating and Storage Junction TJ, Tstg Temperature Range
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
RqJC Junction
to Case
RqJA Junction
to Ambient
Unit
Thermal Resistance
Each Die Effective, 4 Die
100 193 °C/W 39 83.
MPQ3467 Datasheet
