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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Quad Memory Driver Transistor
PNP Silicon
14 13 12 11 10 9 8
PNP
1234567
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous
VCEO VCBO VEBO
IC
–40
–40
–5.0
–1.0
Each Transistor
Four Transistors Equal Power
Vdc Vdc Vdc Adc
Total Device Dissipation
@ TA = 25°C(1) Derate above 25°C
PD 650
5.2
1500 12
mW mW/°C
Total Device Dissipation
@ TC = 25°C Derate above 25°C
PD 1.25
10
3.2 Watts 25.6 mW/°C
Operating and Storage Junction TJ, Tstg Temperature Range
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
RqJC Junction
to Case
RqJA Junction
to Ambient
Unit
Thermal Resistance
Each Die Effective, 4 Die
100 193 °C/W 39 83.
MPQ3467 Datasheet
