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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Quad Memory Driver Transistor
PNP Silicon
14 13 12 11 10 9 8 PNP
1234567
MPQ3762
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous
VCEO VCBO VEBO
IC
–40
–40
–5.0
–1.5
Each Transistor
Four Transistors Equal Power
Vdc Vdc Vdc Adc
Total Device Dissipation
@ TA = 25°C Derate above 25°C
PD 750
5.98
1700 13.6
mW mW/°C
Total Device Dissipation
@ TC = 25°C Derate above 25°C
PD 1.25
10
3.2 Watts 25.6 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance(1)
Each Die Effective, 4 Die
Junction to Case
100 39
Junction to Ambient
167 73.
MPQ3762 Datasheet
