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MPQ6427 - QUAD DARLINGTON TRANSISTOR

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MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage MPQ6426 MPQ6427 vCEO 30 40 Vdc Collector-Base Voltage MPQ6426 MPQ6427 vCBO 40 50 Vdc Emitter-Base Voltage —Collector Current Continuous Vebo •c 12 Vdc 500 mAdc Four Die Each Die Equal Power Total Device Dissipation @Ta = 25°C(1) Derate above 25X PD 500 4.0 900 mW 7.2 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Pd TJ- Tstg 825 2400 6.7 19.2 - 55 to + 1 50 mW mW/°C °C (1) Second Breakdown occurs at power levels greater than 3 times the power dissipation rating. THERMAL CHARACTERISTICS Characteristic Thermal Resistance Each Die Effective, 4 Die Coupling Factors Q1-Q4 or Q2-Q3 Q1-Q2orQ3-Q4 Junction to Case 151 52 34 2.