MPS3906
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPS3906/D
General Purpose Transistor
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER
1 2 3
MAXIMUM RATINGS
Rating Collector
- Emitter Voltage Collector
- Base Voltage Emitter
- Base Voltage Collector Current
- Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value
- 40
- 40
- 5.0
- 200 625 5.0 1.5 12
- 55 to +150 Unit Vdc Vdc Vdc m Adc m W m W/°C Watts m W/°C °C
CASE 29- 04, STYLE 1 TO- 92 (TO- 226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Rq JA Rq JC Max 200 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector
- Emitter Breakdown Voltage(1) (IC =
- 1.0 m Adc, IB = 0) Collector
- Base Breakdown...
