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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPS4123/D
Amplifier Transistors
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER
MPS4123 MPS4124
1 2 3
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCE VCB VEB IC PD PD TJ, Tstg MPS4123 30 40 5.0 200 625 5.0 1.5 12 – 55 to +150 MPS4124 25 30 Unit Vdc Vdc Vdc mAdc mW mW/°C W mW/°C °C
CASE 29–04, STYLE 1 TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Rq JA Rq JC Max 200 83.