MPS4123 Datasheet | Motorola Semiconductor

.. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPS4123/D Amplifier Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER MPS4123 MPS4124 1 2 3 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCE VCB VEB IC PD PD TJ, Tstg MPS4123 30 40 5.0 200 625 5.0 1.5 12 - 55 to +150 MPS4124 25 30 Unit Vdc Vdc Vdc m Adc m W m W/°C W m W/°C °C CASE 29- 04, STYLE 1 TO- 92 (TO- 226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Rq JA Rq JC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 1.0 m A, IB = 0) Collector - Base Breakdown Voltage (IC = 10 m A, IE = 0) Emitter - Base Breakdown Voltage (IC = 0, IE = 10 m A) Collector Cutoff Current (VCB = 20 V, IE = 0) Emitter Cutoff Current (VEB = 3.0 V, IC = 0) MPS4123 MPS4124 MPS4123 MPS4124 V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 30 25 40 30 5.0 - - - - - - - 50 50 Vdc Vdc Vdc n Adc n...