MPS6651
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPS6601/D
Amplifier Transistors
COLLECTOR 3 2 BASE NPN 1 EMITTER 2 BASE PNP 1 EMITTER COLLECTOR 3
NPN MPS6601 MPS6602- PNP MPS6651 MPS6652-
Voltage and current are negative for PNP transistors
- Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector
- Emitter Voltage MPS6601/6651 MPS6602/6652 Collector
- Base Voltage MPS6601/6651 MPS6602/6652 Emitter
- Base Voltage Collector Current
- Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg VCBO 25 30 4.0 1000 625 5.0 1.5 12
- 55 to +150 Vdc m Adc m W m W/°C Watts m W/°C °C Symbol VCEO 25 40 Vdc Value Unit Vdc
1 2 3
CASE 29- 04, STYLE 1 TO- 92 (TO- 226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Rq JA(1) Rq JC Max 200 83.3 Unit °C/W °C/W
ELECTRICAL...
