MPS6726
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPS6726/D
One Watt Amplifier Transistor
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER
MPS6726 MPS6727
MAXIMUM RATINGS
Rating Collector
- Emitter Voltage MPS6726 MPS6727 Collector
- Base Voltage MPS6726 MPS6727 Emitter
- Base Voltage Collector Current
- Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg VCBO
- 40
- 50
- 5.0
- 1.0 1.0 8.0 2.5 20
- 55 to +150 Vdc Adc Watts m W/°C Watts m W/°C °C Symbol VCEO
- 30
- 40 Vdc Value Unit Vdc
1 2 3
CASE 29- 05, STYLE 1 TO- 92 (TO- 226AE)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Rq JA Rq JC Max 125 50 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector
- Emitter Breakdown Voltage (IC =
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