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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
RF Amplifier Transistor
PNP Silicon
COLLECTOR 3
1 BASE
2 EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Total Device Dissipation @ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
PD
–20 Vdc
–20 Vdc
–3.0 Vdc
350 mW 2.81 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
357
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
°C/W Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = –1.
MPSH81 Datasheet
