MPSW01
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPSW01/D
One Watt High Current Transistors
NPN Silicon
COLLECTOR 3 2 BASE 1 EMITTER
MPSW01 MPSW01A-
- Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector
- Emitter Voltage MPSW01 MPSW01A Collector
- Base Voltage MPSW01 MPSW01A Emitter
- Base Voltage Collector Current
- Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg Symbol VCEO 30 40 VCBO 40 50 5.0 1000 1.0 8.0 2.5 20
- 55 to +150 Vdc m Adc Watts m W/°C Watts m W/°C °C Vdc Value Unit Vdc
1 2 3
CASE 29- 05, STYLE 1 TO- 92 (TO- 226AE)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Rq JA Rq JC Max 125 50 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector
- Emitter...
