MPSW13
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPSW13/D
One Watt Darlington Transistors
NPN Silicon
COLLECTOR 3 BASE 2
MPSW13 MPSW14
EMITTER 1
MAXIMUM RATINGS
Rating Collector
- Emitter Voltage Collector
- Base Voltage Emitter
- Base Voltage Collector Current
- Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg Value 30 30 10 1.0 1.0 8.0 2.5 20
- 55 to +150 Unit Vdc Vdc Vdc Adc Watts m W/°C Watts m W/°C °C
CASE 29- 05, STYLE 1 TO- 92 (TO- 226AE)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Rq JA Rq JC Max 125 50 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector
- Emitter Breakdown Voltage (IC = 100 µAdc, VBE = 0) Collector Cutoff...
