MPSW42
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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One Watt High Voltage Transistor
NPN Silicon
COLLECTOR 3 2 BASE
Motorola Preferred Device
1 EMITTER
MAXIMUM RATINGS
Rating Collector
- Emitter Voltage Collector
- Base Voltage Emitter
- Base Voltage Collector Current
- Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 300 300 6.0 500 1.0 8.0 2.5 20
- 55 to +150 Unit Vdc Vdc Vdc m Adc Watt m W/°C Watts m W/°C °C
CASE 29- 05, STYLE 1 TO- 92 (TO- 226AE)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Rq JA Rq JC Max 125 50 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector
- Emitter Breakdown Voltage(1) (IC = 1.0 m Adc, IB =...
