MPSW45 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPSW45/D One Watt Darlington Transistors NPN Silicon COLLECTOR 3 BASE 2 MPSW45 MPSW45A- - Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCES VCBO VEBO IC PD PD TJ, Tstg MPSW45 40 50 12 1.0 1.0 8.0 2.5 20 - 55 to +150 MPSW45A 50 60 12 1.0 Unit Vdc Vdc Vdc Adc Watts mW/°C Watts mW/°C °C 1 2 3 CASE 29- 05, STYLE 1 TO- 92 (TO- 226AE) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 100 µAdc, VBE = 0) Collector - Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 40 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) MPSW45 MPSW45A IEBO V(BR)CES MPSW45 MPSW45A V(BR)CBO MPSW45 MPSW45A V(BR)EBO ICBO - - - 100 100 100 nAdc 50 60 12 - - ...