MRF1047T1 Overview
Order this document by MRF1047T1/D NPN Silicon Low Noise Transistor The MRF1047T1 is fabricated utilizing Motorola’s latest 12 GHz fτ discrete bipolar silicon process. The minimum noise figure is 1.0 dB at VCE = 3.0 V and IC = 3.0 mA. The noise performance of the MRF1047T1 at low bias makes this device the ideal choice in high gain, low noise applications.