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MRF1518NT1 - RF Power Field Effect Transistor

Key Features

  • icrostrip Glass Teflon, 31 mils, 2 oz. Copper Figure.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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( DataSheet : www.DataSheet4U.com ) Freescale Semiconductor Technical Data MRF1518 Rev. 6, 3/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of this device make it ideal for large- signal, common source amplifier applications in 12.5 volt mobile FM equipment. • Specified Performance @ 520 MHz, 12.5 Volts Output Power — 8 Watts D Power Gain — 11 dB Efficiency — 55% • Capable of Handling 20:1 VSWR, @ 15.