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MRF160 - MOSFET BROADBAND RF POWER FET

Features

  • NG PLANE DIM A C D H J K M SOURCE GATE SOURCE DRAIN CASE 249.
  • 06 ISSUE H.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF160/D The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50% • Excellent Thermal Stability, Ideally Suited for Class A Operation • Facilitates Manual Gain Control, ALC and Modulation Techniques • 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR • Low Crss – 0.8 pF Typical at VDS = 28 Volts Designed primarily for wideband large–signal output and driver from 30–500 MHz. MRF160 4.0 W, to 400 MHz MOSFET BROADBAND RF POWER FET CASE 249–06, STYLE 3 D G S MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain–Gate Voltage Drain–Gate Voltage (RGS = 1.
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