Datasheet4U Logo Datasheet4U.com

MRF16006 - RF POWER TRANSISTOR

📥 Download Datasheet

Datasheet preview – MRF16006

📁 Similar Datasheet

  • MRF16006 - RF POWER TRANSISTOR (Tyco Electronics)
  • MRF160 - MOSFET BROADBAND RF POWER FET (Tyco Electronics)
  • MRF16030 - RF POWER TRANSISTOR (Tyco Electronics)
  • MRF161 - SILICON N-CHANNEL RF POWER MOSFET (Advanced Semiconductor)
  • MRF166C - MOSFET BROADBAND RF POWER FETs (Tyco Electronics)
  • MRF166C - The RF MOSFET (MA-COM)
  • MRF166W - TMOS BROADBAND RF POWER FET (Tyco Electronics)
  • MRF10005 - The RF Line Microwave Power Transistor (Tyco)
  • MRF1000MB - Microwave Pulse Power Transistors (Tyco)
  • MRF1001A - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi)
Other Datasheets by Motorola
  • MRF160 - MOSFET BROADBAND RF POWER FET
  • MRF16030 - RF POWER TRANSISTOR
  • MRF162 - RF Power FET
  • MRF166 - MOSFET BROADBAND RF POWER FETs
  • MRF166C - MOSFET BROADBAND RF POWER FETs
  • MRF166W - TMOS BROADBAND RF POWER FET
  • MRF10005 - MICROWAVE POWER TRANSISTOR
  • MRF1002 - MICROWAVE POWER TRANSISTOR

Full PDF Text Transcription

Click to expand full text
MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF16006/D NPN Silicon MRF16006 6.0 WATTS, 1.6 GHz RF POWER TRANSISTOR NPN SILICON RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • Specified 28 Volt, 1.6 GHz Class–C Characteristics Output Power = 6 Watts Minimum Gain = 7.4 dB, @ 6 Watts Minimum Efficiency = 40% @ 6 Watts • Characterized with Series Equivalent Large–Signal Parameters from 1500 MHz to 1700 MHz • Silicon Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
Published: |