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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF166/D
The RF MOSFET Line
RF Power Field Effect Transistors
• Low Crss — 4.5 pF @ VDS = 28 V
N–Channel Enhancement Mode MOSFETs
Designed primarily for wideband large–signal output and driver from 30 – 500 MHz.
MRF166 Datasheet
