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MRF18030ALSR3 - RF Power Field Effect Transistors

Download the MRF18030ALSR3 datasheet PDF. This datasheet also covers the MRF18030ALR3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MRF18030ALR3_Motorola.pdf) that lists specifications for multiple related part numbers.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF18030A/D The RF MOSFET Line RF Power Field Effect Transistors MRF18030ALR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030ALSR3 Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1805 - 1880 MHz.