This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | MRF18030ALSR3 |
|---|---|
| Datasheet | MRF18030ALSR3 MRF18030ALR3 Datasheet (PDF) |
| File Size | 508.05 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | RF Power Field Effect Transistors |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF18030A/D The RF MOSFET Line RF Power Field Effect Transistors MRF18030ALR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF18030ALSR3 Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications.
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MRF18030ALR3 | RF Power Field Effect Transistors |
| MRF18030BR3 | THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTOR |
| MRF18030BSR3 | THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTOR |
| MRF18060A | RF POWER FIELD EFFECT TRANSISTORS |
| MRF18060ALSR3 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF18060AR3 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF18060ASR3 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF18060B | RF Power Field Effect Transistors |
| MRF18060BLSR3 | RF Power Field Effect Transistors |
| MRF18060BR3 | RF Power Field Effect Transistors |
