| Part number | MRF18030BR3 |
|---|---|
| Datasheet | MRF18030BR3_Motorola.pdf |
| File Size | 296.50 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTOR |
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SEMICONDUCTOR TECHNICAL DATA Order this document by MRF18030B/D The RF MOSFET Line RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. Specified for GSM 1930 1990 MHz.
See all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MRF18030BSR3 | THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTOR |
| MRF18030ALR3 | RF Power Field Effect Transistors |
| MRF18030ALSR3 | RF Power Field Effect Transistors |
| MRF18060A | RF POWER FIELD EFFECT TRANSISTORS |
| MRF18060ALSR3 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF18060AR3 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF18060ASR3 | RF POWER FIELD EFFECT TRANSISTORS |
| MRF18060B | RF Power Field Effect Transistors |
| MRF18060BLSR3 | RF Power Field Effect Transistors |
| MRF18060BR3 | RF Power Field Effect Transistors |
