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MRF183S - LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs

Download the MRF183S datasheet PDF (MRF183 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for lateral n-channel broadband rf power mosfets.

Features

  • 62 58 54 51 47 44 41 38 37 33 30 28 26 24 21 19 17 14 12 9 9 8 6 4 |S12| 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.017 0.016 0.016 0.015 0.015 0.014 0.014 0.013 0.013 0.012 0.011 0.011 0.012 0.012 0.012 0.010 0.009 0.008 0.007 0.007 0.007 0.006 0.006 0.006 0.006 0.005 0.004 0.004 S12 ∠φ 11 8 4 3 2 0.
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📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF183_Motorola.pdf) that lists specifications for multiple related part numbers.
Other Datasheets by Motorola

Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF183/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance at 945 MHz, 28 Volts Output Power – 45 Watts PEP Power Gain – 11.
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