MRF187R3 - RF POWER FIELD EFFECT TRANSISTORS

This page provides the datasheet information for the MRF187R3, a member of the MRF187 RF POWER FIELD EFFECT TRANSISTORS family.

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Motorola Semiconductor (now NXP Semiconductors)

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MRF187R3 RF POWER FIELD EFFECT TRANSISTORS by Motorola - Datasheet Preview — Datasheet preview – MRF187R3

Datasheet Details

Part number	MRF187R3
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	360.77 KB
Description	RF POWER FIELD EFFECT TRANSISTORS
Datasheet	MRF187R3 Datasheet
Additional preview pages of the MRF187R3 datasheet.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF187/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 26 volt base station equipment. • Guaranteed Performance @ 880 MHz, 26 Volts Output Power — 85 Watts PEP Power Gain — 12 dB Efficiency — 30% Intermodulation Distortion — –28 dBc • 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, 880 MHz, 85 Watts CW • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • Available in Tape and Reel.

Published: Jan 2, 2006 |