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MRF19045LSR3 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Download the MRF19045LSR3 datasheet PDF. This datasheet also covers the MRF19045LR3 variant, as both devices belong to the same rf power field effect transistors n-channel enhancement-mode lateral mosfets family and are provided as variant models within a single manufacturer datasheet.

General Description

0.120″ x 0.333″ x 0.100″, Surface Mount Ferrite Beads, Fair Rite #2743019446 10 mF, 35 V Tantalum Surface Mount Chip Capacitors, Kemet #T495X106K035AS4394 0.1 mF Chip Capacitors, Kemet #CDR33BX104AKWS 24 pF Chip Capacitors, B Case, ATC #100B240JP500X 470 pF Chip Capacitor, B Case, ATC #100B471JP200X

Key Features

  • FWD Carrier (9.8 dB Peak/Avg. Ratio @ 0.01% Probability) (CCDF) 0 1 2 3 4 5 6 7 8 9 10 11 12 13.5 Pout, OUTPUT POWER (WATTS) (Avg. 2.
  • Carrier N.
  • CDMA) Figure 7. 2-Carrier N-CDMA Power Gain versus Output Power Figure 8. CW Output Power, Power Gain and Drain Efficiency versus Input Power.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF19045LR3_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
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MRF19060LSR3 RF Power Field Effect Transistors Freescale Semiconductor
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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF19045LR3 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF19045R3 RF POWER FIELD EFFECT TRANSISTORS
MRF19030LR3 The RF MOSFET Line RF Power Field Effect Transistors
MRF19030LSR3 The RF MOSFET Line RF Power Field Effect Transistors
MRF19030R3 RF POWER FIELD EFFECT TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF19045/D The RF MOSFET Line RF Power Field Effect Transistors Designed for PCN and PCS base station applications with frequencies from www.datasheet4u.com 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier N - Channel Enhancement - Mode Lateral MOSFETs applications. • Typical CDMA Performance @ 1960 MHz, 26 Volts, IDQ = 550 mA Multi - carrier CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 9.5 Watts Avg. Power Gain — 14.9 dB Efficiency — 23.