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MRF19090SR3 - RF POWER FIELD EFFECT TRANSISTORS

Download the MRF19090SR3 datasheet PDF (MRF19090 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for rf power field effect transistors.

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Note: The manufacturer provides a single datasheet file (MRF19090_Motorola.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19090/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies www.datasheet4u.com from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications. • Typical CDMA Performance: 1990 MHz, 26 Volts IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 9 Watts Power Gain — 10 dB Adjacent Channel Power — 885 kHz: –47 dBc @ 30 kHz BW 1.25 MHz: –55 dBc @ 12.5 kHz BW 2.
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