MRF20030 datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MRF20030 |
|---|---|
| Datasheet | MRF20030_Motorola.pdf |
| File Size | 282.60 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | RF POWER TRANSISTOR |
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF20030/D The RF Sub Micron Bipolar Line RF Power Bipolar Transistor Designed for broadband mercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large signal, mon emitter class A and class AB amplifier applications. Suitable for frequency modulated, amplitude...
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MRF20060 | RF Power Bipolar Transistors |
| MRF20060R | RF POWER BIPOLAR TRANSISTOR |
| MRF20060RS | RF POWER BIPOLAR TRANSISTOR |
| MRF20060S | RF Power Bipolar Transistors |
| MRF207 | HIGH FREQUENCY TRANSISTOR |
| MRF21010LR1 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF21010LSR1 | RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF21030LR3 | RF Power Field Effect Transistors |
| MRF21030LSR3 | RF Power Field Effect Transistors |
| MRF21030R3 | RF POWER FIELD EFFECT TRANSISTORS |
