MRF20030
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF Sub- Micron Bipolar Line
RF Power Bipolar Transistor
Designed for broadband mercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large- signal, mon- emitter class A and class AB amplifier applications. Suitable for frequency modulated, amplitude modulated and multi- carrier base station RF power amplifiers.
- Specified 26 Volts, 2.0 GHz, Class AB, Two- Tones Characteristics Output Power
- 30 Watts (PEP) Power Gain
- 9.8 d B Efficiency
- 34% Intermodulation Distortion
- - 28 d Bc
- Typical 26 Volts, 1.88 GHz, Class AB, CW Characteristics Output Power
- 30 Watts Power Gain
- 10.5 d B Efficiency
- 40%
- Excellent Thermal Stability
- Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz, 30 Watts (PEP) Output Power
- Characterized with Series Equivalent Large- Signal Impedance Parameters
- S- Parameter Characterization at High...
