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MRF20060RS - RF POWER BIPOLAR TRANSISTOR

Download the MRF20060RS datasheet PDF. This datasheet also covers the MRF20060R variant, as both devices belong to the same rf power bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (MRF20060R_Motorola.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF20060R RF POWER BIPOLAR TRANSISTOR
MRF20060 RF Power Bipolar Transistors
MRF20060S RF Power Bipolar Transistors
MRF20030 RF POWER TRANSISTOR
MRF207 HIGH FREQUENCY TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF20060R/D The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices make them ideal for large–signal, common emitter class AB amplifier applications. These devices are suitable for frequency modulated, amplitude modulated and multi–carrier base station RF power amplifiers.