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MRF21010LSR1 - RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Download the MRF21010LSR1 datasheet PDF. This datasheet also covers the MRF21010LR1 variant, as both devices belong to the same rf power field effect transistors n-channel enhancement-mode lateral mosfets family and are provided as variant models within a single manufacturer datasheet.

General Description

2.2 pF Chip Capacitor, B Case 1.8 pF Chip Capacitor, B Case 0.5 pF Chip Capacitor, B Case 10 µF, 35 V Tantalum Chip Capacitors 1 nF Chip Capacitors, B Case 5.6 pF Chip Capacitors, B Case 470 µF, 63 V Electrolytic Capacitor 10 pF Chip Capacitor, B Case Type N Connector Flange Mounts 1.0 kW Chip Resis

Key Features

  • .89 - j5.04 2.73 - j6.19 Zload Ω 2.93 - j1.71 2.76 - j2.28 2.83 - j2.59 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 10. Series Equivalent Input and Output Impedance MRF21010LR1 MRF21010LSR1 6 For More Information On This Pr.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF21010LR1_Motorola.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF21010LSR1 RF Power Field Effect Transistors Freescale Semiconductor
MRF21010LR1 RF Power Field Effect Transistors Freescale Semiconductor
MRF21060LR3 RF Power Field Effect Transistors NXP
MRF21060LSR3 RF Power Field Effect Transistors NXP
MRF21120R6 RF Power Field Effect Transistor Freescale Semiconductor

Other Datasheets by Motorola Semiconductor (now NXP Semiconductors)

Part Number Description
MRF21010LR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF21030LR3 RF Power Field Effect Transistors
MRF21030LSR3 RF Power Field Effect Transistors
MRF21030R3 RF POWER FIELD EFFECT TRANSISTORS
MRF21030SR3 RF POWER FIELD EFFECT TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21010/D The RF MOSFET Line MRF21010LR1 RF Power Field Effect Transistors MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. • Typical W - CDMA Performance: - 45 dBc ACPR, 2140 MHz, 28 Volts, 5 MHz Offset/4.096 MHz BW, 15 DTCH Output Power — 2.1 Watts Power Gain — 13.