Datasheet Summary
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF Sub- Micron MOSFET Line
RF Power Field Effect Transistors
N- Channel Enhancement- Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N
- P C S / c e l l u l a r r a d i o a n d W L L applications.
- Typical 2- carrier W- CDMA Performance for VDD = 28 Volts, IDQ = 1600 mA, f1 = 2.1125 GHz, f2 = 2.1225 GHz, Channel bandwidth = 3.84 MHz, adjacent channels at ± 5 MHz , ACPR and IM3 measured in 3.84 MHz bandwidth. Peak/Avg = 8.5 dB @ 0.01% probability...
