MRF240
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF Line
NPN Silicon RF Power Transistors
. . . designed for 13.6 volt VHF large- signal class C and class AB linear power amplifier applications in mercial and industrial equipment.
- High mon Emitter Power Gain
- Specified 13.6 V, 160 MHz Performance: Output Power = 40 Watts Power Gain = 9.0 d B Min Efficiency = 55% Min
- Load Mismatch Capability at Rated Voltage and RF Drive
- Silicon Nitride Passivated
- Low Intermodulation Distortion, d3 =
- 30 d B Typ MAXIMUM RATINGS
Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current
- Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 16 36 4.0 8.0 100 0.57
- 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/°C °C
40 W, 145
- 175 MHz RF POWER TRANSISTORS NPN SILICON
CASE 145A- 09, STYLE 1
THERMAL CHARACTERISTICS
Characteristic Thermal...
