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MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF314/D
NPN Silicon RF Power Transistors
. . . designed primarily for wideband large–signal driver and output amplifier stages in the 30 – 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts Minimum Gain = 10 dB • 100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR • Gold Metallization System for High Reliability Applications
MRF314
30 W, 30 – 200 MHz RF POWER TRANSISTORS NPN SILICON
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 35 65 4.0 3.4 82 0.
MRF314 Datasheet
