MRF323 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF323/D The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large- signal driver and predriver amplifier stages in the 200- 500 MHz frequency range. - Guaranteed Performance at 400 MHz, 28 V Output Power = 20 Watts Power Gain = 10 d B Min Efficiency = 50% Min - 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR - Gold Metallization System for High Reliability .. 20 W, 400 MHz RF POWER TRANSISTOR NPN SILICON - puter- Controlled Wirebonding Gives Consistent Input Impedance MAXIMUM RATINGS Rating Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current - Continuous Collector Current - Peak Total Device Dissipation @ TC = 25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 33 60 4.0 2.2 3.0 55 310 - 65 to +150 Unit Vdc Vdc Vdc Adc Watts m W/°C °C CASE 244- 04, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 3.2 Unit °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector- Emitter Breakdown Voltage (IC = 20 m Adc, IB = 0) Collector- Emitter Breakdown Voltage (IC = 20 m Adc, VBE = 0) Collector- Base Breakdown Voltage (IC = 20 m Adc, IE = 0) Emitter- Base Breakdown Voltage (IE = 2.0 m Adc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 33 60 60 4.0 - - - - - - - - - - 2.0 Vdc Vdc Vdc Vdc m Adc ON CHARACTERISTICS DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) h FE 20 - 80 - NOTE: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1994 MRF323 1 ELECTRICAL CHARACTERISTICS - continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit DYNAMIC...