MRF3866R2 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF3866/D The RF Line NPN Silicon High-Frequency Transistor - Tape and reel packaging available for MRF3866R2: R2 suffix = 2,500 units per reel MAXIMUM RATINGS Rating .. Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Maximum Junction Temperature Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg TJmax Value 30 55 3.5 0.4 625 5.0 1.5 12 - 55 to +150 150 Unit Vdc Vdc Vdc Adc m W m W/°C Watts m W/°C °C °C IC = 400 m A HIGH- FREQUENCY TRANSISTORS NPN SILICON CASE 751- 05, STYLE 1 (SO- 8) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol RθJC RθJA Max 83.3 125 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector- Emitter Breakdown Voltage (IC = 5.0 m Adc, RBE = 10 Ω) Collector- Emitter Sustaining Voltage (IC = 5.0 m Adc, IB = 0) Emitter- Base Breakdown Voltage (IE = 100 µAdc, IC = 0) Collector Cutoff Current (VCE = 28 Vdc, IB = 0) Collector Cutoff Current (VCE = 30 Vdc, VBE = - 1.5 Vdc (Rev.), TC = 150°C) (VCE = 55 Vdc, VBE = - 1.5 Vdc (Rev.) Emitter Cutoff Current (VBE = 3.5 Vdc, IC = 0) V(BR)CER VCEO(sus) V(BR)EBO ICEO ICEX - - IEBO - 5.0 0.1 0.1 m Adc (continued) 55 30 3.5 - - - - 0.02 Vdc Vdc Vdc m Adc m Adc (Replaces MPS3866/D) RF DEVICE DATA ©MOTOROLA Motorola, Inc. 1997 MRF3866R2 1 ELECTRICAL CHARACTERISTICS - continued (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = 360 m Adc, VCE = 5.0 Vdc) (1) (IC = 50 m Adc, VCE = 5.0 Vdc) Collector- Emitter Saturation Voltage (IC = 100 m Adc, IB = 20 m Adc) h FE 5.0 10 VCE(sat) - - 200 1.0 Vdc - SMALL- SIGNAL CHARACTERISTICS Current- Gain -...