MRF5S19100HR3 Overview
Freescale Semiconductor Technical Data Document Number: 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
MRF5S19100HR3 Key Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- Lower Thermal Resistance Package
- Low Gold Plating Thickness on Leads, 40μ″ Nominal
- RoHS pliant
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel
- CDMA LATERAL N