MRF607
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
HIGH FREQUENCY TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
Vdc
Collector-Base Voltage
VCBO
Vdc
Emitter-Base Voltage
- Collector Current Continuous
@Total Device Dissipation Tq = 75°C(1)
Derate above 75°C
VEBO
'C
4.0 0.33 3.5
Vdc Adc
Watts m W/°C
Storage Temperature
T stg
- 65 to + 200
°C
(1) These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as class B or C RF amplifiers.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage d C = 25 m Adc, Ib = 0)
Collector-Emitter Breakdown Voltage d C = 25 m Adc, VBE = 0)
Emitter-Base Breakdown Voltage (IE = 0.5 m Adc, Iq = 0)
Collector Cutoff...
