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MRF6522-70R3 - RF Power Field Effect Transistor

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF6522 - 70/D The RF MOSFET Line RF Power Field Effect Transistor Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source amplifier applications in 26 volt base station equipment. • Specified Performance @ Full GSM Band, 921 - 960 MHz, 26 Volts Output Power, P1dB — 80 Watts (Typ) Power Gain @ P1dB — 16 dB (Typ) Efficiency @ P1dB — 58% (Typ) • Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. N - Channel Enhancement - Mode Lateral MOSFET MRF6522−70R3 921 - 960 MHz, 70 W, 26 V LATERAL N - CHANNEL RF POWER MOSFET Freescale Semiconductor, Inc...
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