MRF7S35120HSR3 Datasheet PDF (RF Power Field Effect Transistor)

MRF7S35120HSR3 - RF Power Field Effect Transistor

Description

47 Ω, 100 MHz Short Ferrite Bead 470 μF, 63 V Electrolytic Capacitor 47 μF, 50 V Electrolytic Capacitor 22 μF, 35 V Tantalum Capacitors 3.3 pF Chip Capacitor 2.7 pF Chip Capacitors 22 μF, 25 V Tantalum Capacitors 51 Ω, 1/4 W Chip Resistor Part Number 2743019447 477KXM063M 476KXM050M T491X226K035AT A

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF7S35120HSR3 3100- 3500 MHz, 120 W PEAK, 32 V PULSED.

Datasheet Details

Part number	MRF7S35120HSR3
Manufacturer	Motorola
File Size	479.34 KB
Description	RF Power Field Effect Transistor
Datasheet	MRF7S35120HSR3 Datasheet
Additional preview pages of the MRF7S35120HSR3 datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data Document Number: MRF7S35120HS www.DataSheet4U.com Rev. 1, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz. • Typical Pulsed Performance: VDD = 32 Volts, IDQ = 150 mA, Pout = 120 Watts Peak (24 Watts Avg.), Pulsed Signal, f = 3500 MHz, Pulse Width = 100 μsec, Duty Cycle = 20% Power Gain — 12 dB Drain Efficiency — 40% • Typical WiMAX Performance: VDD = 32 Volts, IDQ = 900 mA, Pout = 18 Watts Avg., f = 3500 MHz, 802.16d, 64 QAM 3/4, 4 Bursts, 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF Power Gain — 13 dB Drain Efficiency — 16% RCE — - 33 dB (EVM — 2.

Published: Aug 14, 2010 |