MRF7S35120HSR3 Description
Freescale Semiconductor Technical Data Document Number: 1, 6/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz. Typical Pulsed Performance:.
MRF7S35120HSR3 Key Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- Greater Negative Gate
- Source Voltage Range for Improved Class C Operation
- RoHS pliant
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
- CHANNEL RF POWER MOSFET