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MRF859S - NPN SILICON RF POWER TRANSISTOR

This page provides the datasheet information for the MRF859S, a member of the MRF859 NPN SILICON RF POWER TRANSISTOR family.

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www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF859/D The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 to 960 MHz. • Specified for VCE = 24 Vdc, IC = 0.9 Adc Characteristics Output Power = 6.5 Watts CW Minimum Power Gain = 11.5 dB Minimum ITO = + 47 dBm Typical Noise Figure = 6 dB • Characterized with Small–Signal S–Parameters and Series Equivalent Large–Signal Parameters from 800 to 960 MHz • Silicon Nitride Passivated • 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ 24 Vdc, IC = 0.
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