MRF901 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR901LT1/D The RF Line NPN Silicon High-Frequency Transistor Designed primarily for use in high- gain, low- noise small- signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times. - High Current- Gain - Bandwidth Product - Low Noise Figure @ f = 1.0 GHz - NF(matched) = 1.8 d B (Typ) (MRF9011LT1) NF(matched) = 1.9 d B (Typ) (MMBR901LT1, T3) - High Power Gain - Gpe(matched) = 13.5 d B (Typ) @ f = 1.0 GHz (MRF9011LT1) Gpe(matched) = 12.0 d B (Typ) @ f = 1.0 GHz (MMBR901LT1, T3) - Guaranteed RF Parameters (MRF9011LT1) - Surface Mounted SOT- 23 & SOT- 143 Offer Improved RF Performance Lower Package Parasitics High Gain - Available in tape and reel packaging options: T1 suffix = 3,000 units per reel T3 suffix = 10,000 units per reel MMBR901LT1, T3 MPS901 MRF901 MRF9011LT1 IC = 30 m A SURFACE MOUNTED HIGH- FREQUENCY TRANSISTOR NPN SILICON CASE 318- 08, STYLE...