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MRF905 - RF OSCILLATOR TRANSISTOR

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MRF905 CASE 26-03, STYLE 1 TO-46 (TO-206AB) RF OSCILLATOR TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a Tq = 100°C Derate above 100°C Storage Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol VCEO VCBO v EBO "C PD Tstg Value 20 35 3.5 150 2.5 40 -65 to +200 Unit Vdc Vdc Vdc mAdc Watts mW/°C °C Symbol R ftJC Max 25 Unit °C/W ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage dC = 10 mAdc, Ib = 0) Collector-Base Breakdown Voltage dC = 0.1 mAdc, El = 0) Emitter-Base Breakdown Voltage (IE = 0.
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